N-channel enhancement mode power MOSFET, silicon, featuring a maximum drain-source voltage of 900V and a continuous drain current of 2.5A. This single-element transistor utilizes pi-MOS III process technology and is housed in a TO-220NIS package with 3 through-hole pins and a tab. Key specifications include a maximum drain-source on-resistance of 6400 mOhm at 10V, typical gate charge of 21 nC at 10V, and typical input capacitance of 510 pF at 25V. Maximum power dissipation is 40000 mW, with an operating temperature range from -55°C to 150°C.
Toshiba 2SK2718(SCMDNSI3) technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220NIS |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 15 |
| Seated Plane Height (mm) | 15 + 5.6(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | pi-MOS III |
| Maximum Drain Source Voltage | 900V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 2.5A |
| Material | Si |
| Maximum Drain Source Resistance | 6400@10VmOhm |
| Typical Gate Charge @ Vgs | 21@10VnC |
| Typical Gate Charge @ 10V | 21nC |
| Typical Input Capacitance @ Vds | 510@25VpF |
| Maximum Power Dissipation | 40000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Download the complete datasheet for Toshiba 2SK2718(SCMDNSI3) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.