N-channel enhancement mode silicon power MOSFET in a TO-220FL package. Features a maximum drain-source voltage of 600V and a continuous drain current of 6A. This single-element transistor offers a maximum drain-source on-resistance of 1250mΩ at 10V. Mounting is via through-hole, with a 3-pin configuration and an integrated tab. Operating temperature range is -55°C to 150°C.
PackageTO-220FL
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba 2SK2777(N-JRC) technical specifications.
General
| Package Family Name | TO-220 |
| Package/Case | TO-220FL |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 9.1 |
| Seated Plane Height (mm) | 13.1(Max) |
| Package Weight (g) | 1.5 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 6A |
| Material | Si |
| Maximum Drain Source Resistance | 1250@10VmOhm |
| Typical Gate Charge @ Vgs | 30@10VnC |
| Typical Gate Charge @ 10V | 30nC |
| Typical Input Capacitance @ Vds | 1300@10VpF |
| Maximum Power Dissipation | 65000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK2777(N-JRC) Datasheet
Download the complete datasheet for Toshiba 2SK2777(N-JRC) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.