N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 20A continuous drain current. This single-element transistor utilizes L2-pi-MOS V process technology and is housed in a 3-pin Case DP package with through-hole mounting. Key electrical characteristics include a maximum gate-source voltage of ±20V, a maximum drain-source on-resistance of 55mΩ at 10V, and a typical gate charge of 25nC. The component offers a maximum power dissipation of 40000mW and operates within a temperature range of -55°C to 150°C.
PackageCase DP
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2782(T6L1SIND) technical specifications.
General
| Package Family Name | Module |
| Package/Case | Case DP |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.8(Max) |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 2.5(Max) |
| Pin Pitch (mm) | 2.3 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | L2-pi-MOS V |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 20A |
| Material | Si |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 55@10VmOhm |
| Typical Gate Charge @ Vgs | 25@10VnC |
| Typical Gate Charge @ 10V | 25nC |
| Typical Input Capacitance @ Vds | 880@10VpF |
| Maximum Power Dissipation | 40000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Typical Output Capacitance | 330pF |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK2782(T6L1SIND) Datasheet
Download the complete datasheet for Toshiba 2SK2782(T6L1SIND) to view detailed technical specifications.
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