TOSHIBA

2SK2837(PAIRDSL,Q)

Datasheet

N-CH Si Power MOSFET, 500V, 20A, TO-3PN, Through Hole

Toshiba

2SK2837(PAIRDSL,Q)

Name: 2SK2837(PAIRDSL,Q) Toshiba
Brand: Toshiba
SKU: 2SK2837(PAIRDSL,Q)

N-CH Si Power MOSFET, 500V, 20A, TO-3PN, Through Hole

N-channel enhancement mode power MOSFET featuring 500V drain-source voltage and 20A continuous drain current. This through-hole mounted transistor utilizes a TO-3PN package with 3 pins and a tab, offering a maximum power dissipation of 150W. Key specifications include a maximum gate-source voltage of ±30V, a typical gate threshold voltage of 4V, and a low drain-source on-resistance of 270mΩ at 10V. Operating temperature range is -55°C to 150°C.

PackageTO-3PN

MountingThrough Hole

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Technical Specifications

Toshiba 2SK2837(PAIRDSL,Q) technical specifications.

General

Package Family Name	TO-3PN
Package/Case	TO-3PN
Package Description	Transistor Outline Package
Pin Count	3
PCB	3
Tab	Tab
Package Length (mm)	15.9(Max)
Package Width (mm)	4.5
Package Height (mm)	19
Seated Plane Height (mm)	23.6(Max)
Pin Pitch (mm)	5.45
Mounting	Through Hole
Configuration	Single
Category	Power MOSFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per Chip	1
Process Technology	pi-MOS V
Maximum Drain Source Voltage	500V
Maximum Gate Source Voltage	±30V
Maximum Continuous Drain Current	20A
Material	Si
Maximum Gate Threshold Voltage	4V
Maximum Drain Source Resistance	270@10VmOhm
Typical Gate Charge @ Vgs	80@10VnC
Typical Gate Charge @ 10V	80nC
Typical Input Capacitance @ Vds	3720@10VpF
Maximum Power Dissipation	150000mW
Min Operating Temperature	-55°C
Max Operating Temperature	150°C
Typical Output Capacitance	1165pF

Compliance

Cage Code	S0562
EU RoHS	Yes
HTS Code	8541290095
Schedule B	8541290080
ECCN	EAR99
Automotive	No
AEC Qualified	No
PPAP	No
Radiation Hardening	No
RoHS Versions	2002/95/EC

Datasheet

This datasheet cannot be embedded due to technical restrictions.

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