N-channel enhancement mode power MOSFET featuring a 600V drain-source voltage and 2A continuous drain current. This single-element silicon transistor is housed in a 3-pin TPS package with through-hole mounting, measuring 8mm x 3.5mm x 7mm. Key specifications include a maximum gate-source voltage of ±30V, 5000mΩ drain-source resistance at 10V, and a typical gate charge of 9nC. It offers a typical input capacitance of 380pF at 10V and a maximum power dissipation of 1300mW, operating within a temperature range of -55°C to 150°C.
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| Package Family Name | TPS |
| Package/Case | TPS |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 8 |
| Package Width (mm) | 3.5 |
| Package Height (mm) | 7 |
| Package Weight (g) | 0.54 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 2A |
| Material | Si |
| Maximum Drain Source Resistance | 5000@10VmOhm |
| Typical Gate Charge @ Vgs | 9@10VnC |
| Typical Gate Charge @ 10V | 9nC |
| Typical Input Capacitance @ Vds | 380@10VpF |
| Maximum Power Dissipation | 1300mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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