2SK2865(NPL)

N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 2A continuous drain current. This single-element silicon transistor is housed in a surface-mount New PW-Mold package (TO-252AB) with 3 pins and a tab. Key specifications include a maximum drain-source on-resistance of 5000 mOhm at 10V, typical gate charge of 9nC at 10V, and typical input capacitance of 380pF at 10V. Maximum power dissipation is 20W, with an operating temperature range of -55°C to 150°C.