The Toshiba 2SK2915(Q,T) is a general-purpose N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 600V and a continuous drain current of 16A. The device has a maximum power dissipation of 150W and a gate to source voltage of 30V. It is packaged in a TO-3 case and is suitable for through-hole mounting.
PackageTO-3
Resistance0.4R
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Toshiba 2SK2915(Q,T) technical specifications.
General
| Package/Case | TO-3 |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.52nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Rds On Max | 400mR |
| Resistance | 0.4R |
Compliance
| RoHS | Not Compliant |
Datasheet
Toshiba 2SK2915(Q,T) Datasheet
Download the complete datasheet for Toshiba 2SK2915(Q,T) to view detailed technical specifications.
No datasheet is available for this part.