N-channel enhancement mode power MOSFET in a 4-pin PW-Mini surface mount package. Features a maximum drain-source voltage of 200V and a continuous drain current of 1A. Offers a maximum drain-source on-resistance of 3500 mOhm at 10V. Operating temperature range from -55°C to 150°C with a maximum power dissipation of 1500mW.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Toshiba 2SK2992(T2LMDNSI3) datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package Family Name | SOT |
| Package/Case | PW-Mini |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 4.6(Max) |
| Package Width (mm) | 2.5 |
| Package Height (mm) | 1.6(Max) |
| Seated Plane Height (mm) | 1.6(Max) |
| Package Weight (g) | 0.05 |
| Mounting | Surface Mount |
| Configuration | Single Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 1A |
| Material | Si |
| Maximum Drain Source Resistance | 3500@10VmOhm |
| Typical Gate Charge @ Vgs | 3@10VnC |
| Typical Gate Charge @ 10V | 3nC |
| Typical Input Capacitance @ Vds | 90@10VpF |
| Maximum Power Dissipation | 1500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Download the complete datasheet for Toshiba 2SK2992(T2LMDNSI3) to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
