The Toshiba 2SK3309(Q) is a TO-220-3 packaged N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 10A and a drain to source breakdown voltage of 450V. The device also features a gate to source voltage of 30V and a fall time of 10ns. It is lead free and suitable for through hole mounting.
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Toshiba 2SK3309(Q) technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 450V |
| Drain to Source Resistance | 650mR |
| Drain to Source Voltage (Vdss) | 450V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 920pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 65W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 65W |
| Rds On Max | 650mR |
| Resistance | 0.48R |
| RoHS | Compliant |
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