The 2SK3374(FUNAI) is a single N-channel enhancement MOSFET from Toshiba with a maximum drain source voltage of 450V and maximum continuous drain current of 1A. It is packaged in a 3-pin TPS package with a seated plane height of 8.5mm and a pin pitch of 2.5mm. The MOSFET is suitable for through hole mounting and has a maximum drain source resistance of 4600 ohms at 10V. It is made from silicon material and has a maximum gate source voltage of ±30V.
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| Package/Case | TPS |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 8 |
| Package Width (mm) | 3.5 |
| Package Height (mm) | 7 |
| Seated Plane Height (mm) | 8.5 |
| Pin Pitch (mm) | 2.5 |
| Package Weight (g) | 0.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 450V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 1A |
| Material | Si |
| Maximum Drain Source Resistance | 4600@10VmOhm |
| Cage Code | S0562 |
| EU RoHS | Yes |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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