N-channel enhancement mode power MOSFET, silicon, featuring a 150V drain-source voltage and 18A continuous drain current. This single-element transistor is housed in a 4-pin TFP package with two tabs, designed for surface mounting. Key electrical characteristics include a maximum drain-source on-resistance of 120 mOhm at 10V, typical gate charge of 57 nC at 10V, and typical input capacitance of 1380 pF at 10V. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 100W.
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| Package Family Name | TFP |
| Package/Case | TFP |
| Pin Count | 4 |
| PCB | 2 |
| Tab | 2Tab |
| Package Length (mm) | 9.2(Max) |
| Package Width (mm) | 9.2(Max) |
| Package Height (mm) | 3(Max) |
| Seated Plane Height (mm) | 3(Max) |
| Mounting | Surface Mount |
| Configuration | Single Dual Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 150V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 18A |
| Material | Si |
| Maximum Drain Source Resistance | 120@10VmOhm |
| Typical Gate Charge @ Vgs | 57@10VnC |
| Typical Gate Charge @ 10V | 57nC |
| Typical Input Capacitance @ Vds | 1380@10VpF |
| Maximum Power Dissipation | 100000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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