N-channel enhancement mode silicon power MOSFET, surface mount, single configuration. Features 30V drain-source voltage, 70A continuous drain current, and low 6mΩ drain-source resistance at 10V. Package is 2-9F1C, 4-pin with 2 tabs, measuring 9.2mm x 9.2mm x 3mm maximum. Typical gate charge is 110nC at 10V, with input capacitance of 5000pF at 10V. Maximum power dissipation is 125W, operating temperature range from -55°C to 150°C.
Package2-9F1C
MountingSurface Mount
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Technical Specifications
Toshiba 2SK3397(TE24L) technical specifications.
General
| Package/Case | 2-9F1C |
| Pin Count | 4 |
| PCB | 2 |
| Tab | 2Tab |
| Package Length (mm) | 9.2(Max) |
| Package Width (mm) | 9.2(Max) |
| Package Height (mm) | 3(Max) |
| Seated Plane Height (mm) | 3(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 70A |
| Material | Si |
| Maximum Drain Source Resistance | 6@10VmOhm |
| Typical Gate Charge @ Vgs | 110@10VnC |
| Typical Gate Charge @ 10V | 110nC |
| Typical Input Capacitance @ Vds | 5000@10VpF |
| Maximum Power Dissipation | 125000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK3397(TE24L) Datasheet
Download the complete datasheet for Toshiba 2SK3397(TE24L) to view detailed technical specifications.
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