N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 10A continuous drain current. This single-element transistor utilizes pi-MOS V process technology and is housed in a TO-220FL package with 3 pins and a tab, suitable for through-hole mounting. Key specifications include a maximum drain-source resistance of 750 mOhm at 10V, typical gate charge of 35nC, and typical input capacitance of 1750pF at 25V. Maximum power dissipation is 100W, with an operating temperature range of -55°C to 150°C.
PackageTO-220FL
MountingThrough Hole
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Technical Specifications
Toshiba 2SK3399(SANKEN) technical specifications.
General
| Package Family Name | TO-220 |
| Package/Case | TO-220FL |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 9.1 |
| Seated Plane Height (mm) | 13.1(Max) |
| Package Weight (g) | 1.5 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | pi-MOS V |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 10A |
| Material | Si |
| Maximum Drain Source Resistance | 750@10VmOhm |
| Typical Gate Charge @ Vgs | 35@10VnC |
| Typical Gate Charge @ 10V | 35nC |
| Typical Input Capacitance @ Vds | 1750@25VpF |
| Maximum Power Dissipation | 100000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK3399(SANKEN) Datasheet
Download the complete datasheet for Toshiba 2SK3399(SANKEN) to view detailed technical specifications.
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