N-channel enhancement mode power MOSFET featuring a 200V drain-source voltage and 25A continuous drain current. This single-element silicon transistor is housed in a 4-pin TFP surface-mount package with two tabs, measuring 9.2mm x 9.2mm x 3mm. Key electrical characteristics include a maximum drain-source on-resistance of 82 mOhm at 10V, typical gate charge of 44nC at 10V, and typical input capacitance of 2080pF at 10V. Maximum power dissipation is 125W, with an operating temperature range of -55°C to 150°C.
PackageTFP
MountingSurface Mount
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Technical Specifications
Toshiba 2SK3444(T4LMATUD) technical specifications.
General
| Package Family Name | TFP |
| Package/Case | TFP |
| Pin Count | 4 |
| PCB | 2 |
| Tab | 2Tab |
| Package Length (mm) | 9.2(Max) |
| Package Width (mm) | 9.2(Max) |
| Package Height (mm) | 3(Max) |
| Seated Plane Height (mm) | 3(Max) |
| Mounting | Surface Mount |
| Configuration | Single Dual Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 25A |
| Material | Si |
| Maximum Drain Source Resistance | 82@10VmOhm |
| Typical Gate Charge @ Vgs | 44@10VnC |
| Typical Gate Charge @ 10V | 44nC |
| Typical Input Capacitance @ Vds | 2080@10VpF |
| Maximum Power Dissipation | 125000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK3444(T4LMATUD) Datasheet
Download the complete datasheet for Toshiba 2SK3444(T4LMATUD) to view detailed technical specifications.
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