N-channel enhancement mode power MOSFET featuring 900V drain-source voltage and 2.5A continuous drain current. This silicon transistor utilizes pi-MOS IV process technology and is housed in a 3-pin TO-220SIS through-hole package with a tab. Key specifications include a maximum gate-source voltage of ±30V, a typical gate threshold voltage of 4V, and a maximum drain-source on-resistance of 6400 mOhm at 10V. It offers a maximum power dissipation of 40W and operates within a temperature range of -55°C to 150°C.
PackageTO-220SIS
MountingThrough Hole
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Technical Specifications
Toshiba 2SK3566(LBS1YASK,Q technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220SIS
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
15
Seated Plane Height (mm)
17
Pin Pitch (mm)
2.54
Package Weight (g)
1.7
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
pi-MOS IV
Maximum Drain Source Voltage
900V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
2.5A
Material
Si
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
6400@10VmOhm
Typical Gate Charge @ Vgs
12@10VnC
Typical Gate Charge @ 10V
12nC
Typical Input Capacitance @ Vds
470@25VpF
Maximum Power Dissipation
40000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SK3566(LBS1YASK,Q Datasheet
Download the complete datasheet for Toshiba 2SK3566(LBS1YASK,Q to view detailed technical specifications.
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