N-channel enhancement mode silicon power MOSFET designed for through-hole mounting. Features a maximum drain-source voltage of 900V and a continuous drain current of 2.5A. Housed in a TO-220SIS package with 3 pins and a tab, offering a low drain-source on-resistance of 6400 mOhm at 10V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 40W.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Toshiba 2SK3566(MDNSI3,Q) datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Toshiba 2SK3566(MDNSI3,Q) technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220SIS |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 15 |
| Seated Plane Height (mm) | 17 |
| Pin Pitch (mm) | 2.54 |
| Package Weight (g) | 1.7 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | pi-MOS IV |
| Maximum Drain Source Voltage | 900V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 2.5A |
| Material | Si |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 6400@10VmOhm |
| Typical Gate Charge @ Vgs | 12@10VnC |
| Typical Gate Charge @ 10V | 12nC |
| Typical Input Capacitance @ Vds | 470@25VpF |
| Maximum Power Dissipation | 40000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Toshiba 2SK3566(MDNSI3,Q) to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
