N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 3.5A continuous drain current. This single element silicon transistor utilizes pi-MOS VI process technology and is housed in a TO-220SIS through-hole package with 3 pins and a tab. Key specifications include a maximum drain-source resistance of 2200 mOhm at 10V and a maximum power dissipation of 35W.
PackageTO-220SIS
MountingThrough Hole
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Technical Specifications
Toshiba 2SK3567(STA4,Q) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220SIS
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
15
Seated Plane Height (mm)
17
Pin Pitch (mm)
2.54
Package Weight (g)
1.7
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
pi-MOS VI
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
3.5A
Material
Si
Maximum Drain Source Resistance
2200@10VmOhm
Typical Gate Charge @ Vgs
16@10VnC
Typical Gate Charge @ 10V
16nC
Typical Input Capacitance @ Vds
550@25VpF
Maximum Power Dissipation
35000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SK3567(STA4,Q) Datasheet
Download the complete datasheet for Toshiba 2SK3567(STA4,Q) to view detailed technical specifications.
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