2SK3667(LBS2SONY,Q

N-channel enhancement mode silicon power MOSFET featuring a 600V drain-source voltage and 7.5A continuous drain current. This single-element transistor is housed in a TO-220SIS through-hole package with 3 pins and a tab, offering a maximum power dissipation of 45W. Key electrical characteristics include a ±30V gate-source voltage, 1000mΩ drain-source resistance at 10V, and a typical gate charge of 33nC at 10V. Operating temperature range spans from -55°C to 150°C.