The 2SK372-V(F) is a single N-channel junction field-effect transistor from Toshiba. It features a maximum continuous drain current of 30 and a maximum power dissipation of 200. The transistor is available in a through-hole package with a maximum operating temperature range of -55°C to 125°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Toshiba 2SK372-V(F) datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Toshiba 2SK372-V(F) technical specifications.
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 4.2(Max) |
| Package Width (mm) | 2.6(Max) |
| Package Height (mm) | 3.2(Max) |
| Mounting | Through Hole |
| Channel Type | N |
| Configuration | Single |
| Maximum Continuous Drain Current | 30mA |
| Maximum Drain Gate Voltage | -40V |
| Material | Si |
| Maximum Power Dissipation | 200mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Toshiba 2SK372-V(F) to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
