The Toshiba 2SK3742(Q) is a high-voltage N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 900V and a continuous drain current of 5A. The device is packaged in a TO-252-3 surface mount package and is lead free and RoHS compliant. The MOSFET has a maximum power dissipation of 100W and a fall time of 110ns.
Toshiba 2SK3742(Q) technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 5A |
| Current Rating | 5A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 2.5R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.04nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount, Through Hole |
| Package Quantity | 50 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 450W |
| Radiation Hardening | No |
| Rds On Max | 520mR |
| RoHS Compliant | Yes |
| DC Rated Voltage | 900V |
| RoHS | Compliant |
No datasheet is available for this part.
