2SK3742(Q,M)

N-channel enhancement mode power MOSFET featuring 900V drain-source voltage and 5A continuous drain current. This single-element silicon transistor utilizes pi-MOS IV process technology and is housed in a TO-220SIS through-hole package with 3 pins and a tab. Key specifications include a maximum gate-source voltage of ±30V, a typical gate charge of 25nC at 10V, and a maximum drain-source on-resistance of 2500mΩ at 10V. Maximum power dissipation is 45000mW, with an operating temperature range of -55°C to 150°C.