N-channel enhancement mode power MOSFET featuring 900V drain-source voltage and 8A continuous drain current. This through-hole component utilizes pi-MOS IV process technology and is housed in a TO-220SIS package with 3 pins and a tab. Key specifications include a maximum gate-source voltage of ±30V, 1300mOhm drain-source resistance at 10V, and 60nC typical gate charge. Maximum power dissipation is 50000mW, with an operating temperature range of -55°C to 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Toshiba 2SK3799(LBS1RBCONQ datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Toshiba 2SK3799(LBS1RBCONQ technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220SIS |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 15 |
| Seated Plane Height (mm) | 17 |
| Pin Pitch (mm) | 2.54 |
| Package Weight (g) | 1.7 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | pi-MOS IV |
| Maximum Drain Source Voltage | 900V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 8A |
| Material | Si |
| Maximum Drain Source Resistance | 1300@10VmOhm |
| Typical Gate Charge @ Vgs | 60@10VnC |
| Typical Gate Charge @ 10V | 60nC |
| Typical Input Capacitance @ Vds | 2200@25VpF |
| Maximum Power Dissipation | 50000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Toshiba 2SK3799(LBS1RBCONQ to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
