N-channel enhancement mode silicon power MOSFET designed for through-hole mounting. Features a maximum drain-source voltage of 900V and a continuous drain current of 8A. This single-element transistor utilizes pi-MOS IV process technology and is housed in a TO-220SIS package with 3 pins and a tab. Maximum power dissipation is 50000mW, with an operating temperature range of -55°C to 150°C.
PackageTO-220SIS
MountingThrough Hole
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Technical Specifications
Toshiba 2SK3799(S4PHIL,Q) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220SIS
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
15
Seated Plane Height (mm)
17
Pin Pitch (mm)
2.54
Package Weight (g)
1.7
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
pi-MOS IV
Maximum Drain Source Voltage
900V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
8A
Material
Si
Maximum Drain Source Resistance
1300@10VmOhm
Typical Gate Charge @ Vgs
60@10VnC
Typical Gate Charge @ 10V
60nC
Typical Input Capacitance @ Vds
2200@25VpF
Maximum Power Dissipation
50000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SK3799(S4PHIL,Q) Datasheet
Download the complete datasheet for Toshiba 2SK3799(S4PHIL,Q) to view detailed technical specifications.
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