N-channel MOSFET with 60V drain-source breakdown voltage and 70A continuous drain current. Features low 5.8mΩ drain-source on-resistance and 125W maximum power dissipation. Operates from -55°C to 150°C, with a nominal gate-source threshold voltage of 4V. This through-hole component offers a 130ns fall time and 13.4nF input capacitance.
MountingThrough Hole
PolarityN-CHANNEL
Power125W
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Technical Specifications
Toshiba 2SK3845(Q) technical specifications.
General
| Continuous Drain Current (ID) | 70A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 5.8mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 130ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 19mm |
| Input Capacitance | 12.4nF |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 5.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 400ns |
| Width | 4.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba 2SK3845(Q) Datasheet
Download the complete datasheet for Toshiba 2SK3845(Q) to view detailed technical specifications.
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