2SK3868(STA4,Q)

N-channel enhancement mode power MOSFET featuring 500V drain-source voltage and 5A continuous drain current. This through-hole component utilizes a TO-220NIS package with 3 pins and a tab, constructed from silicon within a plastic housing. Key specifications include a maximum gate-source voltage of ±30V, 1700mOhm drain-source resistance at 10V, and a typical gate charge of 16nC at 10V. Maximum power dissipation is 35000mW, with an operating temperature range of -55°C to 150°C.