N-channel enhancement mode power MOSFET featuring 800V drain-source voltage and 6.5A continuous drain current. This single-element transistor is housed in a TO-220SM surface-mount package with 3 pins and a tab. Key specifications include a maximum drain-source resistance of 1700 mOhm at 10V, typical gate charge of 35 nC at 10V, and typical input capacitance of 1500 pF at 25V. Maximum power dissipation is 80W, with an operating temperature range of -55°C to 150°C.
PackageTO-220SM
MountingSurface Mount
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Technical Specifications
Toshiba 2SK3879(SM) technical specifications.
General
| Package Family Name | TO-220 |
| Package/Case | TO-220SM |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 9.1 |
| Package Height (mm) | 4.7(Max) |
| Package Weight (g) | 1.4 |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 800V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 6.5A |
| Material | Si |
| Maximum Drain Source Resistance | 1700@10VmOhm |
| Typical Gate Charge @ Vgs | 35@10VnC |
| Typical Gate Charge @ 10V | 35nC |
| Typical Input Capacitance @ Vds | 1500@25VpF |
| Maximum Power Dissipation | 80000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK3879(SM) Datasheet
Download the complete datasheet for Toshiba 2SK3879(SM) to view detailed technical specifications.
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