N-channel enhancement mode silicon power MOSFET, 800V drain-source voltage, 6.5A continuous drain current, and 1700mOhm maximum drain-source resistance at 10V. Features a TO-220SM package for surface mounting with 3 pins and a tab. Typical gate charge is 35nC at 10V, with input capacitance of 1500pF at 25V. Maximum power dissipation is 80W, operating temperature range from -55°C to 150°C.
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Toshiba 2SK3879(TE24R) technical specifications.
| Package Family Name | TO-220 |
| Package/Case | TO-220SM |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 9.1 |
| Package Height (mm) | 4.7(Max) |
| Package Weight (g) | 1.4 |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 800V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 6.5A |
| Material | Si |
| Maximum Drain Source Resistance | 1700@10VmOhm |
| Typical Gate Charge @ Vgs | 35@10VnC |
| Typical Gate Charge @ 10V | 35nC |
| Typical Input Capacitance @ Vds | 1500@25VpF |
| Maximum Power Dissipation | 80000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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