2SK3994(Q,T)

N-channel enhancement mode power MOSFET featuring 250V drain-source voltage and 20A continuous drain current. This single element silicon transistor is housed in a TO-220NIS package with 3 through-hole pins and a tab. Key specifications include a maximum gate-source voltage of ±30V, 105mΩ drain-source resistance at 10V, and a typical gate charge of 45nC at 10V. Maximum power dissipation is 45000mW, with an operating temperature range of -55°C to 150°C.