TOSHIBA

2SK4016(Q)

Datasheet

Toshiba

2SK4016(Q)

Name: 2SK4016(Q) Toshiba
Brand: Toshiba
SKU: 2SK4016(Q)

600V 13A N-CH MOSFET TO-220

N-channel power MOSFET designed for high-voltage applications, featuring a 600V drain-to-source breakdown voltage and a continuous drain current of 13A. This through-hole mounted component offers a low on-resistance of 500mΩ and a maximum power dissipation of 50W, operating across a temperature range of -55°C to 150°C. The TO-220 package facilitates efficient heat dissipation, with a typical gate-source voltage of 4V and a fall time of 50ns.

PackageTO-220-3

MountingThrough Hole

PolarityN-CHANNEL

Power50W

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Technical Specifications

Toshiba 2SK4016(Q) technical specifications.

General

Package/Case	TO-220-3
Continuous Drain Current (ID)	13A
Drain to Source Breakdown Voltage	600V
Drain to Source Resistance	500mR
Drain to Source Voltage (Vdss)	600V
Dual Supply Voltage	600V
Fall Time	50ns
Gate to Source Voltage (Vgs)	30V
Height	8.1mm
Input Capacitance	3.1nF
Lead Free	Lead Free
Length	10mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	50W
Mount	Through Hole
Nominal Vgs	4V
Number of Elements	1
Package Quantity	50
Packaging	Bulk
Polarity	N-CHANNEL
Power Dissipation	50W
Radiation Hardening	No
Rds On Max	500mR
Termination	Through Hole
Width	4.5mm