N-channel power MOSFET designed for high-voltage applications, featuring a 600V drain-to-source breakdown voltage and a continuous drain current of 13A. This through-hole mounted component offers a low on-resistance of 500mΩ and a maximum power dissipation of 50W, operating across a temperature range of -55°C to 150°C. The TO-220 package facilitates efficient heat dissipation, with a typical gate-source voltage of 4V and a fall time of 50ns.
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| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 500mR |
| Drain to Source Voltage (Vdss) | 600V |
| Dual Supply Voltage | 600V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 8.1mm |
| Input Capacitance | 3.1nF |
| Lead Free | Lead Free |
| Length | 10mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| Rds On Max | 500mR |
| Termination | Through Hole |
| Width | 4.5mm |
| RoHS | Not CompliantNo |
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