N-channel power MOSFET designed for high-voltage applications, featuring a 600V drain-to-source breakdown voltage and a continuous drain current of 13A. This through-hole mounted component offers a low on-resistance of 500mΩ and a maximum power dissipation of 50W, operating across a temperature range of -55°C to 150°C. The TO-220 package facilitates efficient heat dissipation, with a typical gate-source voltage of 4V and a fall time of 50ns.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power50W
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Technical Specifications
Toshiba 2SK4016(Q) technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
13A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
500mR
Drain to Source Voltage (Vdss)
600V
Dual Supply Voltage
600V
Fall Time
50ns
Gate to Source Voltage (Vgs)
30V
Height
8.1mm
Input Capacitance
3.1nF
Lead Free
Lead Free
Length
10mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Through Hole
Nominal Vgs
4V
Number of Elements
1
Package Quantity
50
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
50W
Radiation Hardening
No
Rds On Max
500mR
Termination
Through Hole
Width
4.5mm
Compliance
RoHS
Not CompliantNo
Datasheet
Toshiba 2SK4016(Q) Datasheet
Download the complete datasheet for Toshiba 2SK4016(Q) to view detailed technical specifications.
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