N-channel enhancement mode silicon MOSFET, designed for through-hole mounting in a TO-92 plastic package. Features a maximum drain-source voltage of 60V and a continuous drain current of 0.2A. Offers a maximum gate-source voltage of ±20V and a maximum power dissipation of 400mW. Operates across a temperature range of -55°C to 150°C.
PackageTO-92
MountingThrough Hole
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Technical Specifications
Toshiba 2SK982(F) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-92 |
| Package/Case | TO-92 |
| Package Description | Plastic Header Style Package |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 5.1(Max) |
| Package Width (mm) | 4.1(Max) |
| Package Height (mm) | 4.7(Max) |
| Seated Plane Height (mm) | 4.7(Max) + 1.8 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-92 |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 0.2A |
| Material | Si |
| Maximum Drain Source Resistance | 1000@10VmOhm |
| Typical Input Capacitance @ Vds | 55@10VpF |
| Maximum Power Dissipation | 400mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba 2SK982(F) Datasheet
Download the complete datasheet for Toshiba 2SK982(F) to view detailed technical specifications.
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