The 3SK195(F) is a single dual gate enhancement mode N-channel RF transistor from Toshiba. It is packaged in the SMQ surface mount package, with a 4-pin count and 4 PCB connections. The transistor has a maximum drain-source voltage of 13.5V and a maximum continuous drain current of 0.03A. It can dissipate a maximum power of 150mW and operates over a temperature range of -55°C to 125°C.
PackageSMQ
MountingSurface Mount
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Technical Specifications
Toshiba 3SK195(F) technical specifications.
General
| Package/Case | SMQ |
| Pin Count | 4 |
| PCB | 4 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.5 |
| Package Height (mm) | 1.1 |
| Mounting | Surface Mount |
| Jedec | SC-61 |
| Channel Type | N |
| Configuration | Single Dual Gate |
| Channel Mode | Enhancement |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 13.5V |
| Maximum Continuous Drain Current | 0.03A |
| Maximum Power Dissipation | 150mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Typical Power Gain | 27dB |
| Typical Input Capacitance @ Vds | 2.7@6VpF |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba 3SK195(F) Datasheet
Download the complete datasheet for Toshiba 3SK195(F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.