The Toshiba DF10G7M1N is a unidirectional transient voltage suppressor diode with a maximum operating temperature of 150°C. It features a silicon diode element material and a maximum reverse voltage of 5V. The diode has a nominal breakdown voltage of 6V and a maximum clamping voltage of 12V. It is available in a 10-pin R-PDSO-N10 package.
PolarityUNIDIRECTIONAL
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Technical Specifications
Toshiba DF10G7M1N technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 10 |
| Terminal Position | DUAL |
| Number of Elements | 5 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 5 |
| Breakdown Voltage-Min | 6 |
| Clamping Voltage-Max | 12 |
| Breakdown Voltage-Nom | 6 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Toshiba DF10G7M1N Datasheet
Download the complete datasheet for Toshiba DF10G7M1N to view detailed technical specifications.
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