Trans IGBT Chip N-CH 1.2KV 10A 3-Pin(3+Tab) TO-3PN
MountingThrough Hole
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Technical Specifications
Toshiba GT10Q101(Q) technical specifications.
General
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.7V |
| Input Type | STANDARD |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.