The GT15J321 is a flange mount insulated gate bipolar transistor with a collector emitter breakdown voltage of 600V and a maximum collector current of 15A. It has a maximum power dissipation of 30W and operates over a temperature range of -55°C to 150°C. The transistor is packaged in a rail/through hole configuration and is not radiation hardened. It is not compliant with RoHS regulations, but the status of its compliance with the Restriction of Hazardous Substances (SVHC) is unknown.
MountingThrough Hole
Power30W
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Technical Specifications
Toshiba GT15J321 technical specifications.
General
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.45V |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 15A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Toshiba GT15J321 Datasheet
Download the complete datasheet for Toshiba GT15J321 to view detailed technical specifications.
No datasheet is available for this part.