The GT15J321(Q) is a 600V insulated gate bipolar transistor available in a TO-220-3 package, suitable for through hole mounting. It can handle a maximum collector current of 15A and operates within a temperature range of -55°C to 150°C. This transistor is not designed for radiation hardened applications.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Toshiba GT15J321(Q) technical specifications.
General
| Package/Case | TO-220-3 |
| Collector-emitter Voltage-Max | 600V |
| Max Collector Current | 15A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Bulk |
| Radiation Hardening | No |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba GT15J321(Q) Datasheet
Download the complete datasheet for Toshiba GT15J321(Q) to view detailed technical specifications.
No datasheet is available for this part.