The GT15Q102 is a 1.2kV insulated gate bipolar transistor with a maximum collector current of 15A and a maximum power dissipation of 170W. It is available in a FLANGE MOUNT package type and is suitable for operation over a temperature range of -55°C to 150°C. The device is not radiation hardened and is not RoHS compliant.
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| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 2.7V |
| Max Collector Current | 15A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Power Dissipation | 170W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Termination | Through Hole |
| RoHS | Not CompliantNo |