Toshiba
GT25Q101
TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, TO-3PL, TO-3PL, 3 PIN, Insulated Gate BIP Transistor
MountingThrough Hole
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Technical Specifications
Toshiba GT25Q101 technical specifications.
General
Collector Emitter Voltage (VCEO)
1.2kV
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Mount
Through Hole
RoHS Compliant
No
Compliance
RoHS
Not Compliant
Datasheet
Toshiba GT25Q101 Datasheet
Download the complete datasheet for Toshiba GT25Q101 to view detailed technical specifications.
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