Toshiba
GT30J301
TRANSISTOR 30 A, 600 V, N-CHANNEL IGBT, LEAD FREE, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor
MountingThrough Hole
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Technical Specifications
Toshiba GT30J301 technical specifications.
General
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.7V
Max Collector Current
30A
Max Operating Temperature
150°C
Max Power Dissipation
155W
Mount
Through Hole
Packaging
Rail/Tube
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
No
Compliance
RoHS
Not CompliantNo
Datasheet
Toshiba GT30J301 Datasheet
Download the complete datasheet for Toshiba GT30J301 to view detailed technical specifications.
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