The GT30J301 is a 600V insulated gate bipolar transistor with a maximum collector current of 30A and a maximum operating temperature of 150°C. It is packaged in a FLANGE MOUNT, R-PSFM-T3 package and is available in a rail/tube packaging format. The device is not radiation hardened and is not compliant with RoHS regulations. It has a maximum power dissipation of 155W.
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Toshiba GT30J301 technical specifications.
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.7V |
| Max Collector Current | 30A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 155W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
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