The GT40G121(AITI,Q) is a single-channel insulated gate bipolar transistor (IGBT) from Toshiba. It features a TO-220AB package with a 3-pin configuration and is designed for through-hole mounting. The device has a maximum collector-emitter voltage of 400V and a maximum continuous collector current of 40A. It can operate at a maximum temperature of 150°C. The GT40G121(AITI,Q) is suitable for a variety of applications, including power conversion and motor control.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Toshiba GT40G121(AITI,Q) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220AB |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.8 |
| Package Height (mm) | 9.6 |
| Package Weight (g) | 2 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 400V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Continuous Collector Current | 40A |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba GT40G121(AITI,Q) Datasheet
Download the complete datasheet for Toshiba GT40G121(AITI,Q) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.