The GT40J321 is a single insulated gate bipolar transistor with a maximum collector-emitter voltage of 600V and a maximum continuous collector current of 40A. It has a maximum power dissipation of 120W and a typical collector-emitter saturation voltage of 2V. The transistor is packaged in a TO-3PN outline and is mounted through a hole. It operates over a temperature range of -55°C to 150°C.
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| Package/Case | TO-3PN |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.9(Max) |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 19 |
| Seated Plane Height (mm) | 20 + 3.3(Max) |
| Mounting | Through Hole |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 600V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Continuous Collector Current | 40A |
| Maximum Power Dissipation | 120000mW |
| Typical Collector Emitter Saturation Voltage | 2V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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