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Technical Specifications
Toshiba GT60N321Q technical specifications.
General
| Collector Emitter Breakdown Voltage | 1kV |
| Collector Emitter Voltage (VCEO) | 1kV |
| Collector-emitter Voltage-Max | 2.8V |
| Height | 26mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 20.5mm |
| Max Collector Current | 60A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170W |
| Mount | Through Hole |
| Package Quantity | 100 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 2.5us |
| Width | 5.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba GT60N321Q Datasheet
Download the complete datasheet for Toshiba GT60N321Q to view detailed technical specifications.
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