Dual PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector-emitter voltage of 50V and a continuous collector current of 0.15A. This surface-mount device utilizes a 6-pin US package (SOT-363) with dimensions of 2mm x 1.25mm x 0.9mm. Offers a minimum DC current gain of 120 and a maximum transition frequency of 80MHz, operating within a temperature range of -55°C to 125°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Toshiba HN1A01F-Y(BRA,F) datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | US |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 1.1(Max) |
| Package Weight (g) | 0.0068 |
| Mounting | Surface Mount |
| Jedec | SOT-363 |
| Type | PNP |
| Configuration | Dual |
| Number of Elements per Chip | 2 |
| Maximum Collector Base Voltage | 50V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 0.15A |
| Maximum Power Dissipation | 300mW |
| Material | Si |
| Minimum DC Current Gain | 120@2mA@6V |
| Maximum Transition Frequency | 80(Min)MHz |
| Category | Bipolar Small Signal |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Toshiba HN1A01F-Y(BRA,F) to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
