PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 50V maximum collector-emitter voltage and 0.15A maximum DC collector current. This dual-element transistor is housed in a compact 6-pin US package (SOT-363) with surface mount capability. Offers a minimum DC current gain of 120 at 2mA/6V and a maximum transition frequency of 80MHz. Operates across a temperature range of -55°C to 125°C.
PackageUS
MountingSurface Mount
Quick Jump:
Technical Specifications
Toshiba HN1A01F-Y(T5LJRC,F technical specifications.
General
| Package/Case | US |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 1.1(Max) |
| Package Weight (g) | 0.0068 |
| Mounting | Surface Mount |
| Jedec | SOT-363 |
| Type | PNP |
| Configuration | Dual |
| Number of Elements per Chip | 2 |
| Maximum Collector Base Voltage | 50V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 0.15A |
| Maximum Power Dissipation | 300mW |
| Material | Si |
| Minimum DC Current Gain | 120@2mA@6V |
| Maximum Transition Frequency | 80(Min)MHz |
| Category | Bipolar Small Signal |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba HN1A01F-Y(T5LJRC,F Datasheet
Download the complete datasheet for Toshiba HN1A01F-Y(T5LJRC,F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.