Dual NPN/PNP bipolar junction transistor for small signal applications. Features a 50V maximum collector-emitter voltage and 0.15A maximum DC collector current. Surface mountable in a 6-pin US package (SOT-363) with dimensions of 2mm x 1.25mm x 0.9mm. Offers a minimum DC current gain of 200 and a maximum power dissipation of 200mW. Operates across a temperature range of -55°C to 125°C.
PackageUS
MountingSurface Mount
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Technical Specifications
Toshiba HN1B04FU-GR(T5R,T) technical specifications.
General
| Package/Case | US |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 1.1(Max) |
| Package Weight (g) | 0.0068 |
| Mounting | Surface Mount |
| Jedec | SOT-363 |
| Type | NPN|PNP |
| Configuration | Dual |
| Number of Elements per Chip | 2 |
| Maximum Collector Base Voltage | 60@NPN|50@PNPV |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 0.15A |
| Maximum Power Dissipation | 200mW |
| Material | Si |
| Minimum DC Current Gain | 200@2mA@6V |
| Maximum Transition Frequency | 150(Typ)@NPN|120(Typ)@PNPMHz |
| Category | Bipolar Small Signal |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | No |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba HN1B04FU-GR(T5R,T) Datasheet
Download the complete datasheet for Toshiba HN1B04FU-GR(T5R,T) to view detailed technical specifications.
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