The HN1C01FE-GR(5L,F,T is a surface mount bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 150mA. It has a maximum power dissipation of 100mW and a transition frequency of 80MHz. The transistor is packaged in a cut tape format with a quantity of one. It is suitable for use in a variety of electronic applications requiring a high-speed BJT. Operating temperature range is not specified.
MountingSurface Mount
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Technical Specifications
Toshiba HN1C01FE-GR(5L,F,T technical specifications.
General
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Power Dissipation | 100mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Transition Frequency | 80MHz |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba HN1C01FE-GR(5L,F,T Datasheet
Download the complete datasheet for Toshiba HN1C01FE-GR(5L,F,T to view detailed technical specifications.
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