The HN1C01FE(T5RSONY,F is a dual NPN bipolar junction transistor in a surface mount ES package. It has a maximum collector base voltage of 60V, maximum emitter base voltage of 5V, and maximum collector-emitter voltage of 50V. The transistor can handle a maximum DC collector current of 0.15A and a maximum power dissipation of 300mW. It is made of silicon material and has a maximum transition frequency of 80MHz. The operating temperature range is from -55°C to 125°C.
PackageES
MountingSurface Mount
Quick Jump:
Technical Specifications
Toshiba HN1C01FE(T5RSONY,F technical specifications.
General
| Package/Case | ES |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 1.6 |
| Package Width (mm) | 1.2 |
| Pin Pitch (mm) | 0.5 |
| Mounting | Surface Mount |
| Type | NPN |
| Configuration | Dual |
| Number of Elements per Chip | 2 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 0.15A |
| Maximum Power Dissipation | 300mW |
| Material | Si |
| Maximum Transition Frequency | 80(Min)MHz |
| Category | Bipolar Small Signal |
| Max Operating Temperature | 125°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba HN1C01FE(T5RSONY,F Datasheet
Download the complete datasheet for Toshiba HN1C01FE(T5RSONY,F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.