Dual PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V collector-emitter voltage and 0.15A maximum DC collector current. Packaged in a 6-pin US (SOT-363) surface mount configuration with dimensions of 2mm x 1.25mm x 0.9mm. Operates across a temperature range of -55°C to 150°C, with a minimum DC current gain of 200.
PackageUS
MountingSurface Mount
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Technical Specifications
Toshiba HN2A01FU-GR(TE85LF) technical specifications.
General
Package/Case
US
Pin Count
6
PCB
6
Package Length (mm)
2
Package Width (mm)
1.25
Package Height (mm)
0.9
Seated Plane Height (mm)
1.1(Max)
Package Weight (g)
0.0068
Mounting
Surface Mount
Jedec
SOT-363
Type
PNP
Configuration
Dual
Number of Elements per Chip
2
Maximum Collector Base Voltage
50V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
50V
Maximum DC Collector Current
0.15A
Maximum Power Dissipation
100mW
Material
Si
Minimum DC Current Gain
200@2mA@6V
Maximum Transition Frequency
80(Min)MHz
Category
Bipolar Small Signal
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba HN2A01FU-GR(TE85LF) Datasheet
Download the complete datasheet for Toshiba HN2A01FU-GR(TE85LF) to view detailed technical specifications.
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