The HN2A01FU-Y(TE85L,F is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 150mA. It has a gain bandwidth product of 80MHz and a maximum power dissipation of 200mW. The transistor is rated for operation up to 125°C and is packaged in a surface mount package.
MountingSurface Mount
PolarityPNP
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Technical Specifications
Toshiba HN2A01FU-Y(TE85L,F technical specifications.
General
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 100mV |
| Collector-emitter Voltage-Max | 300mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 80MHz |
| hFE Min | 120 |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Transition Frequency | 80MHz |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba HN2A01FU-Y(TE85L,F Datasheet
Download the complete datasheet for Toshiba HN2A01FU-Y(TE85L,F to view detailed technical specifications.
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