Dual NPN RF BJT transistor for surface mount applications. Features a 6-pin US package (SOT-363) with dimensions of 2mm x 1.25mm x 0.9mm. Offers a maximum collector-emitter voltage of 12V and a maximum DC collector current of 0.08A. Achieves a typical transition frequency of 7000MHz and a maximum noise figure of 2dB, with a typical power gain of 11.5dB. Operating temperature range is -55°C to 125°C.
PackageUS
MountingSurface Mount
Quick Jump:
Technical Specifications
Toshiba HN2C10FU(T5LMDNS,F technical specifications.
General
| Package/Case | US |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 1.1(Max) |
| Package Weight (g) | 0.0068 |
| Mounting | Surface Mount |
| Jedec | SOT-363 |
| Material | Si |
| Type | NPN |
| Configuration | Dual |
| Number of Elements per Chip | 2 |
| Maximum Collector-Emitter Voltage | 12V |
| Maximum Collector Base Voltage | 20V |
| Maximum Emitter Base Voltage | 3V |
| Maximum DC Collector Current | 0.08A |
| Maximum Power Dissipation | 200mW |
| Minimum DC Current Gain | 80@20mA@10V |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Transition Frequency | 7000(Typ)MHz |
| Maximum Noise Figure | 2dB |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Operational Bias Conditions | 10V/20mA |
| Typical Power Gain | 11.5dB |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba HN2C10FU(T5LMDNS,F Datasheet
Download the complete datasheet for Toshiba HN2C10FU(T5LMDNS,F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.