Small Signal Schottky Diode, dual parallel configuration, featuring a 45V peak reverse repetitive voltage and 0.1A maximum continuous forward current. This surface-mount component is housed in a 5-pin ESV package (SOT family) with flat leads, measuring 1.6mm x 1.2mm x 0.55mm. It offers a peak non-repetitive surge current of 1A and a peak forward voltage of 0.6V, with a maximum power dissipation of 100mW. Operating temperature range is -40°C to 100°C.
PackageESV
MountingSurface Mount
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Technical Specifications
Toshiba HN2S02JE(TE85L,F) technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | ESV |
| Lead Shape | Flat |
| Pin Count | 5 |
| PCB | 5 |
| Package Length (mm) | 1.6 |
| Package Width (mm) | 1.2 |
| Package Height (mm) | 0.55 |
| Seated Plane Height (mm) | 0.55 |
| Pin Pitch (mm) | 0.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | Small Signal Schottky Diode |
| Configuration | Dual Parallel |
| Peak Reverse Repetitive Voltage | 45V |
| Maximum Continuous Forward Current | 0.1A |
| Peak Non-Repetitive Surge Current | 1A |
| Peak Forward Voltage | 0.6V |
| Peak Reverse Current | 5uA |
| Maximum Power Dissipation | 100mW |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 100°C |
| Operating Junction Temperature | 125°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541100070 |
| Schedule B | 8541100070 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba HN2S02JE(TE85L,F) Datasheet
Download the complete datasheet for Toshiba HN2S02JE(TE85L,F) to view detailed technical specifications.
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